Samsung debuts zHBM, zNAND-O, and BV-NAND next-gen memory for AI data centers

Samsung unveiled three next-generation memory technologies at FMS: zHBM, zNAND-O, and BV-NAND, all relying on advanced wafer bonding techniques. The technologies target different AI data center markets, building on Samsung's earlier roadmap for stacked HBM and 400-layer NAND.

• Samsung debuts three next-generation memory technologies for AI data centers — zHBM, zNAND-O, and BV-NAND all rely on advanced wafer bonding technologies
• Samsung reveals next-gen memory with stacked HBM and 400-layer NAND
• Samsung Tackles the Memory & Storage Wall With 400+ Layer “Hybrid Bonded” V10 BV-NAND & zHBM That Stacks HBM Directly On Top of AI Chips
• Samsung announces next-gen 3D memory when all we want is reasonably priced DDR5
• Samsung Reveals New 3D-Memory Roadmap in Bid for AI Tech Lead